Infineon IPG20N10S4L22ATMA1 100V OptiMOS Power MOSFET for High-Efficiency Power Conversion

The demand for higher efficiency and greater power density in modern electronic systems continues to drive innovation in power semiconductor technology. Addressing this need, the Infineon IPG20N10S4L22ATMA1 100V OptiMOS Power MOSFET stands out as a premier solution designed for high-performance power conversion applications. This device combines low on-state resistance with superior switching characteristics, making it an ideal choice for a wide range of industrial, automotive, and consumer electronics.

A key feature of this MOSFET is its exceptionally low gate charge (Qg) and low reverse recovery charge (Qrr), which significantly reduce switching losses. This is particularly critical in high-frequency switching power supplies, where efficiency losses can accumulate and impact overall system performance. The low RDS(on) of just 2.2 mΩ ensures minimal conduction losses, enabling higher efficiency and better thermal management even under high-load conditions.

The IPG20N10S4L22ATMA1 is built using Infineon’s advanced OptiMOS technology, which optimizes the trade-off between switching speed and on-resistance. The result is a transistor that offers reduced electromagnetic interference (EMI) and smoother switching transitions, contributing to more stable and reliable power stages. These attributes make it especially suitable for applications such as DC-DC converters, motor control systems, and synchronous rectification in SMPS.

Furthermore, the device is housed in a D2PAK (TO-263) package, which provides excellent thermal performance and power dissipation capability. This robust packaging allows designers to push the limits of power density without compromising reliability. The 100V voltage rating also offers a comfortable margin for 48V board net systems, commonly found in telecom and server power applications, enhancing system durability and surge protection.

In summary, the Infineon IPG20N10S4L22ATMA1 exemplifies the innovation in power MOSFETs aimed at achieving new benchmarks in efficiency and power density.

ICGOOODFIND: A high-performance OptiMOS power MOSFET offering an optimal balance of low RDS(on), low gate charge, and excellent thermal characteristics, suitable for demanding power conversion applications.

Keywords:

Power Efficiency

Low RDS(on)

Switching Performance

Thermal Management

OptiMOS Technology