Infineon IPB017N10N5ATMA1 OptiMOS 5 Power MOSFET: Datasheet, Application Circuit, and Features
The Infineon IPB017N10N5ATMA1 represents a significant advancement in power MOSFET technology, belonging to the esteemed OptiMOS™ 5 family. This 100 V N-channel MOSFET is engineered to deliver exceptional efficiency and robustness in a wide array of power conversion applications. Its design prioritizes ultra-low on-state resistance (R DS(on)) and superior switching performance, making it an ideal choice for modern, high-efficiency systems.
Key Features and Benefits
The standout characteristic of the IPB017N10N5ATMA1 is its extremely low typical R DS(on) of just 1.7 mΩ at 10 V. This minimal resistance directly translates to reduced conduction losses, leading to higher efficiency and lower heat generation. This allows for cooler operation, which can improve system reliability and potentially reduce the size and cost of heatsinks.
Furthermore, the device features low total gate charge (Q G) and exceptional reverse recovery performance. These traits are critical for high-frequency switching applications, as they minimize switching losses and enable designers to increase the switching frequency. A higher frequency can, in turn, lead to the use of smaller passive components like inductors and capacitors, reducing the overall system size and weight.
Housed in a TO-263-7 (D2PAK-7) package, this MOSFET offers an excellent power-to-footprint ratio and enhanced thermal characteristics due to its additional pins. The package is designed for high current capability and efficient heat dissipation, making it suitable for demanding automotive and industrial environments.
Primary Applications
The combination of high voltage rating, low R DS(on), and fast switching speed makes the IPB017N10N5ATMA1 exceptionally versatile. Its primary applications include:
DC-DC Converters: In telecom and server power supplies, particularly in synchronous rectification and switch-mode power supply (SMPS) topologies.
Motor Control: For driving brushed and brushless DC motors in industrial automation, robotics, and automotive systems (e.g., electric power steering, pumps).
Solar Inverters: Utilized in maximum power point tracking (MPPT) and inverter stages to maximize energy harvest and conversion efficiency.
Battery Management Systems (BMS): Serving as a high-efficiency switch for protection and load control circuits.
Application Circuit Considerations
A typical application circuit for a half-bridge configuration, common in motor drives and full-bridge converters, is shown below. Critical design considerations include:
1. Gate Driving: A dedicated gate driver IC is mandatory to provide the necessary current to charge and discharge the MOSFET's gate capacitance quickly. This ensures fast switching transitions, minimizing time in the linear region and reducing switching losses. A gate resistor (e.g., 5-10 Ω) is often used to control the switching speed and dampen ringing.
2. Decoupling and Layout: Low-inductance decoupling capacitors must be placed as close as possible to the drain and source terminals of the MOSFET to suppress voltage spikes caused by parasitic inductance in the loop. Proper PCB layout is crucial; using a large ground plane and keeping high-current paths short and wide is essential for stable and efficient operation.
3. Thermal Management: Despite its low losses, effective heat sinking is vital for handling high continuous currents. The D2PAK-7 package should be mounted on a PCB copper area that acts as a heatsink, with thermal vias to dissipate heat to inner or bottom layers.
(A simplified half-bridge circuit diagram would be inserted here, showing two MOSFETs, gate drivers, decoupling capacitors, and the load.)
Datasheet Overview
The official datasheet is the ultimate source of truth for design-in. Key parameters to review include:
Absolute Maximum Ratings: Drain-Source Voltage (V DS = 100 V), Continuous Drain Current (I D = 170 A @ T C = 25°C), and maximum junction temperature (T J = 175°C).
Electrical Characteristics: R DS(on) (max), Gate Threshold Voltage (V GS(th)), and Dynamic parameters like Q G, Q GD, and Q GS.
Switching Characteristics: Turn-On/Off Delay and Rise/Fall Times.
Safe Operating Area (SOA): Provides graphs detailing the current and voltage limits for safe operation under various conditions.
The Infineon IPB017N10N5ATMA1 OptiMOS™ 5 MOSFET sets a high benchmark for power switching devices, offering an optimal balance of ultra-low resistance, fast switching, and high reliability. Its performance is critical for advancing efficiency and power density in next-generation automotive, industrial, and renewable energy applications, enabling designers to create smaller, cooler, and more efficient power systems.
Keywords:
1. OptiMOS 5
2. Low RDS(on)
3. Power Efficiency
4. Automotive Grade
5. Synchronous Rectification
