Infineon BSZ123N08NS3G 30V N-Channel MOSFET: Datasheet, Application Circuit, and Features

The Infineon BSZ123N08NS3G is a state-of-the-art N-Channel MOSFET engineered using Infineon's advanced OptiMOS™ power technology. This 30V logic-level MOSFET is designed to deliver exceptional efficiency and robustness in a compact package, making it an ideal choice for a wide array of modern power management applications.

Key Features and Benefits

The standout characteristic of the BSZ123N08NS3G is its extremely low on-state resistance (R DS(on)) of just 1.8 mΩ (max. at V GS = 10 V). This remarkably low resistance is the primary factor behind its high efficiency, as it minimizes conduction losses and reduces heat generation during operation. This allows for higher power density and better thermal performance in space-constrained designs.

Furthermore, as a logic-level gate drive device, it can be fully turned on with a gate-source voltage (V GS) as low as 2.5 V, making it directly compatible with 3.3 V and 5 V microcontrollers and digital signal processors without the need for additional driver circuitry. Its high peak current capability and 100% avalanche tested ruggedness ensure high reliability and durability in demanding environments, including automotive systems.

Housed in a SuperSO8 (LFPAK) package, it offers an excellent footprint-to-performance ratio, providing the power handling of a larger DPAK in a much smaller size, which is crucial for modern, miniaturized electronics.

Typical Application Circuit

A common application for the BSZ123N08NS3G is as a high-side or low-side switch in DC-DC converters, motor control circuits, and load switching systems. A fundamental low-side switch circuit is outlined below:

1. Load Connection: The drain (D) of the MOSFET is connected to one terminal of the load (e.g., a motor or lamp).

2. Ground Path: The source (S) is connected directly to system ground.

3. Control Input: The gate (G) is connected to the output pin of a microcontroller (MCU) through a small series gate resistor (e.g., 10-100 Ω). This resistor helps dampen ringing and suppress oscillations during fast switching transitions.

4. Flyback Protection: If the load is inductive (like a motor coil), a flyback diode must be placed in reverse bias across the load to protect the MOSFET from voltage spikes generated when the current is suddenly interrupted.

When the MCU output drives the gate voltage high (above the threshold voltage), the MOSFET switches on, allowing current to flow from the load through to ground. When the gate voltage is pulled low, the MOSFET switches off.

Datasheet Overview

The datasheet is the ultimate source of information for designing with this component. Key parameters to review include:

Absolute Maximum Ratings: The limits for drain-source voltage (V DS = 30V), gate-source voltage (V GS = ±20V), and continuous drain current (I D).

Electrical Characteristics: Detailed specs for threshold voltage (V GS(th)), on-state resistance (R DS(on)), total gate charge (Q g), and switching times.

Safe Operating Area (SOA): Graphs that define the combinations of current and voltage the device can handle safely during switching.

Thermal Data: Information on junction-to-ambient and junction-to-case thermal resistance, critical for heatsink design.

ICGOODFIND Summary

The Infineon BSZ123N08NS3G stands out as a superior 30V N-Channel MOSFET solution, combining an ultra-low R DS(on) with logic-level drive in a miniature package. Its exceptional efficiency, power density, and ruggedness make it perfectly suited for demanding applications in automotive, industrial, and consumer electronics, particularly where board space and thermal management are key concerns.

Keywords:

1. OptiMOS™

2. Low RDS(on)

3. Logic-Level

4. SuperSO8

5. Power Switching