Infineon IPP80N04S4-04 N-Channel MOSFET: Key Specifications and Application Circuit Design
The Infineon IPP80N04S4-04 is a state-of-the-art N-Channel power MOSFET engineered using advanced OptiMOS™ technology. This device is specifically designed for high-efficiency power conversion and switching applications, offering an exceptional balance of low on-state resistance and high switching speed. Its robust performance makes it a preferred choice for designers working on power supplies, motor control, and DC-DC converters.
Key Electrical Specifications
The standout feature of the IPP80N04S4-04 is its remarkably low typical on-state resistance (RDS(on)) of just 4 mΩ at a gate-source voltage (VGS) of 10 V. This low resistance is crucial for minimizing conduction losses, which directly translates to higher efficiency and reduced heat generation in high-current applications. The device is rated for a drain-source voltage (VDS) of 40 V and a continuous drain current (ID) of 80 A at a case temperature (TC) of 25°C, with the capability to handle pulse currents up to 320 A. Its low gate charge (QG typical of 47 nC) and fast switching characteristics further ensure that switching losses are kept to a minimum, making it highly effective in high-frequency circuits.
Thermal and Package Characteristics
Housed in a TO-220 package, the MOSFET offers excellent thermal performance and is mechanically robust for easy mounting on heat sinks. The low maximum junction-to-case thermal resistance (RthJC typical of 0.5 K/W) allows for efficient heat dissipation, which is vital for maintaining device reliability under heavy load conditions.
Typical Application Circuit: A Synchronous Buck Converter
One of the most common applications for this MOSFET is in the synchronous buck converter topology, a core circuit for stepping down DC voltage efficiently.
In this circuit, the IPP80N04S4-04 is ideally suited for the low-side (synchronous) switch position. Its ultra-low RDS(on) is critical here because the low-side MOSFET conducts for a significant portion of the switching cycle, and any resistance would lead to substantial I²R losses. The high-side switch (control FET) can also be the same device or one optimized for slightly different parameters like lower gate charge.
Key design considerations for this circuit include:
Gate Driving: A dedicated MOSFET gate driver IC is essential to provide the strong current needed to rapidly charge and discharge the MOSFET's input capacitance. This ensures fast switching transitions, minimizing the time spent in the high-loss linear region.
Decoupling and Layout: Proper power decoupling with capacitors placed close to the MOSFET's drain and source pins is mandatory to suppress voltage spikes and ensure stable operation. A low-inductance PCB layout is non-negotiable for managing high di/dt currents and preventing parasitic oscillations.
Thermal Management: Despite its efficiency, the generated heat must be managed. A sufficiently sized heat sink is often required to keep the junction temperature within safe limits, ensuring long-term reliability.
ICGOOODFIND
In summary, the Infineon IPP80N04S4-04 is a high-performance MOSFET that excels in demanding switching applications. Its defining attributes are its extremely low on-state resistance and high current handling capability, which are pivotal for achieving superior power efficiency. When integrated into well-designed circuits like synchronous buck converters with appropriate gate driving and thermal management, it forms the backbone of modern, high-efficiency power systems.
Keywords:
Low RDS(on)
Synchronous Buck Converter
Power Efficiency
Thermal Management
Gate Driver
