Infineon IPB036N12N3 G5: High-Performance 12V, 36A OptiMOS 5 Power MOSFET
In the realm of power electronics, efficiency, thermal performance, and reliability are paramount. The Infineon IPB036N12N3 G5, a member of the advanced OptiMOS™ 5 power MOSFET family, stands out as a premier solution for demanding 12V applications. Engineered with cutting-edge technology, this component is designed to deliver exceptional performance in a compact form factor, making it an ideal choice for a wide range of industrial, automotive, and consumer applications.
Unmatched Efficiency and Power Density
A key highlight of the IPB036N12N3 G5 is its remarkably low on-state resistance (RDS(on)). With a maximum RDS(on) of just 3.6 mΩ at 10 V, this MOSFET minimizes conduction losses, leading to significantly higher efficiency in power conversion systems. This characteristic is crucial for applications like DC-DC converters, motor control, and load switching, where energy savings and thermal management are critical. The low gate charge (Qg) further enhances its performance by reducing switching losses, especially in high-frequency circuits, allowing for faster switching speeds and smoother operation.
Superior Thermal Performance and Reliability
Housed in a robust D²PAK (TO-263) package, this MOSFET offers an excellent power-to-size ratio, enabling designers to achieve higher power density without compromising on board space. The package is renowned for its superior thermal characteristics, efficiently dissipating heat and ensuring stable operation even under high-stress conditions. This makes the device exceptionally reliable for automotive systems, such as electronic power steering, transmission control, and battery management systems (BMS), where operational integrity is non-negotiable.
Optimized for 12V Automotive and Industrial Systems
The IPB036N12N3 G5 is specifically optimized for 12V battery-fed environments. Its high current handling capability of 36A continuous current and avalanche ruggedness ensure it can withstand voltage spikes and harsh electrical transients common in automotive environments. Furthermore, it is AEC-Q101 qualified, guaranteeing that it meets the stringent quality and reliability standards required for automotive applications. This certification provides designers with the confidence to deploy it in safety-critical systems.
Wide Range of Applications
Beyond automotive, this MOSFET is equally effective in:
- Server and telecom power supplies
- Solar inverters and energy storage systems
- Industrial motor drives and robotics
- High-efficiency SMPS (Switch-Mode Power Supplies)
Its versatility and top-tier electrical characteristics make it a go-to component for engineers aiming to push the boundaries of performance and efficiency.
ICGOOODFIND
The Infineon IPB036N12N3 G5 exemplifies the innovation embedded in the OptiMOS 5 technology, offering a blend of ultra-low RDS(on), high current capability, and robust thermal performance. It is a testament to Infineon's commitment to providing components that meet the evolving demands of modern power electronics, ensuring systems are not only more efficient but also more compact and reliable.
Keywords: OptiMOS 5, Low RDS(on), High Efficiency, Automotive Grade, Power MOSFET.
