Infineon BSC040N10NS5SC 100V OptiMOS 5 Power MOSFET Datasheet and Application Review
The Infineon BSC040N10NS5SC is a state-of-the-art N-channel power MOSFET belonging to the OptiMOS™ 5 100V technology family, designed to deliver exceptional efficiency and robustness in a wide array of power conversion applications. This MOSFET sets a high benchmark with its ultra-low figure-of-merits (R DS(on) × Q G and R DS(on) × E AS), making it a premier choice for designers aiming to maximize power density and thermal performance.
A standout feature of this device is its extremely low on-state resistance (R DS(on)) of just 4.0 mΩ maximum at 10 V V GS. This minimal resistance is crucial for reducing conduction losses, which directly translates to higher efficiency and less heat generation. This allows systems to operate cooler, potentially reducing the size and cost of heatsinks or enabling more compact form factors. The low gate charge (Q G) further enhances switching performance by minimizing driving losses, especially critical in high-frequency switching applications such as synchronous rectification in switched-mode power supplies (SMPS), telecom and server power systems, and industrial motor drives.
The BSC040N10NS5SC is housed in an SuperSO8 (SSO-8) package, which offers an excellent balance between a small footprint and superior thermal and electrical characteristics. The package is designed for low parasitic inductance, which is vital for managing voltage spikes and ensuring stable operation during fast switching transitions. The part is also AEC-Q101 qualified, underscoring its suitability for demanding automotive environments, including electric vehicle (EV) auxiliary systems, battery management, and DC-DC converters.
From a reliability perspective, the MOSFET boasts a high maximum junction temperature (T J) of 175°C and provides robust performance under harsh conditions. Its avalanche ruggedness ensures it can handle unclamped inductive switching (UIS) events, a common stressor in inductive load applications. The device also features a integrated source-drain diode with excellent reverse recovery characteristics, which is essential for minimizing losses in freewheeling or body diode conduction modes.
ICGOOODFIND: The Infineon BSC040N10NS5SC represents a significant leap in power MOSFET technology, offering an optimal blend of ultra-low conduction loss, fast switching capability, and high reliability. Its superior performance makes it an ideal component for pushing the boundaries of efficiency and power density in modern AC-DC power supplies, motor control circuits, and automotive power systems.
Keywords: OptiMOS 5, Low R DS(on), Synchronous Rectification, SuperSO8 Package, AEC-Q101 Qualified.
