Infineon IPD90N06S4-05: A High-Performance N-Channel 60 V Power MOSFET

In the realm of power electronics, the quest for efficiency, reliability, and compactness is never-ending. The Infineon IPD90N06S4-05 stands as a testament to this pursuit, offering designers a superior N-channel 60 V power MOSFET engineered to meet the rigorous demands of modern applications. This device is a key component in optimizing performance in areas such as automotive systems, switch-mode power supplies (SMPS), and motor control circuits.

A primary highlight of the IPD90N06S4-05 is its exceptionally low on-state resistance (RDS(on)) of just 3.5 mΩ typical. This minimized resistance is crucial as it directly translates to reduced conduction losses. When the MOSFET is fully switched on, less power is dissipated as heat, leading to significantly higher overall system efficiency and cooler operation. This characteristic is particularly vital in high-current applications like DC-DC converters and load switching, where every milliohm counts towards energy savings and thermal management.

Furthermore, this MOSFET is built using Infineon’s advanced OptiMOS™ technology platform. This proprietary technology ensures an excellent figure of merit (FOM), striking an optimal balance between low RDS(on) and low gate charge (Qg). The low gate charge allows for very fast switching speeds, which is essential for high-frequency operation. This not only enables the use of smaller passive components like inductors and capacitors but also minimizes switching losses, further boosting efficiency in power conversion stages.

The device is housed in a robust TO-252 (DPAK) package, which offers a excellent combination of a small footprint and effective thermal performance. This makes it suitable for space-constrained PCB designs while ensuring that heat can be efficiently transferred away from the silicon die, supporting sustained operation under heavy load conditions.

With a continuous drain current (ID) rating of 90 A at 25°C and a high pulse current capability, the IPD90N06S4-05 demonstrates robust performance even under demanding transient conditions. Its 60 V drain-source voltage (VDS) rating provides ample headroom for 12 V and 24 V automotive systems, as well as industrial power buses, ensuring reliable operation and a good safety margin against voltage spikes.

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D FIND Summary:

The Infineon IPD90N06S4-05 is a high-efficiency power MOSFET that excels due to its extremely low RDS(on) and fast switching characteristics, courtesy of advanced OptiMOS™ technology. It is an ideal solution for designers focused on maximizing efficiency and power density in automotive, industrial, and computing applications.

Keywords:

Power MOSFET

Low RDS(on)

OptiMOS™ Technology

High Efficiency

Automotive Applications